features for surface mounted applications. low profile package. built-in strain relief. metal silicon junction, maj ority carrier conduction. low power loss, high efficiency. high current capability, low forward voltage drop. high surge capability. KS22 thru ks26 1 2 4.597 3.988 5.283 4.775 2.896 2.489 1.575 1.397 3.93 3.73 2.38 2.18 5.49 5.29 1.47 1.67 1.524 0.762 0.203 0.051 0.305 0.152 recommended land pattern do-214ac(sma) unit: mm 1.981 2.438 absolute maximum ratings ta = 25 parameter symbol KS22 ks23 ks24 ks25 ks26 unit maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i (av) a maximum average forward rectified current at tl i fsm a maximum instantaneous forward voltage at 1.0a * 1 v f v typical thermal resistance r ja r jl /w operating junction temperature range t j storage temperature range t stg * 1. pulse test: 300ms pulse width, 1% duty cycle. 2 50 0.5 0.7 -65to+150 maximum dc reverse current * 1 t a =25 at rated dc blocking voltage t a =100 i r 0.4 ma 55 17 -65 to +125 -65 to +150 10 marking no. KS22 ks23 ks24 ks25 ks26 mariking ss22 ss23 ss24 ss25 ss26 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
|